2N4233A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
2N4233A Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Through Hole
Package / Case
TO-66
Number of Pins
3
Packaging
Bulk
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
TIN LEAD
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
75W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Frequency
4MHz
Pin Count
2
JESD-30 Code
O-MBFM-P2
Number of Elements
1
Polarity
NPN
Power Dissipation
75W
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
5A
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
DC Current Gain-Min (hFE)
25
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$27.22420
$2722.42
2N4233A Product Details
2N4233A Overview
An emitter's base voltage can be kept at 5V to gain high efficiency.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.
2N4233A Features
the emitter base voltage is kept at 5V
2N4233A Applications
There are a lot of Microsemi Corporation 2N4233A applications of single BJT transistors.