2N5582 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.A maximum collector current of 800mA volts is possible.
2N5582 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
a transition frequency of 300MHz
2N5582 Applications
There are a lot of Microsemi Corporation 2N5582 applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
