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2N5582

  • 2N5582
  • 2N5582

2N5582

2N5582

Microsemi Corporation

2N5582 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N5582 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Contact Plating Lead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-206AB, TO-46-3 Metal Can
Transistor Element Material SILICON
Operating Temperature -55°C~200°C TJ
Packaging Bulk
Published 2002
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN LEAD
Subcategory Other Transistors
Max Power Dissipation 500mW
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code O-MBCY-W3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 500mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 1V
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 300MHz
Collector Base Voltage (VCBO) 75V
Turn Off Time-Max (toff) 300ns
Turn On Time-Max (ton) 35ns
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $14.54780 $1454.78
2N5582 Product Details

2N5582 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.A maximum collector current of 800mA volts is possible.

2N5582 Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
a transition frequency of 300MHz

2N5582 Applications


There are a lot of Microsemi Corporation 2N5582 applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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