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2N5875

2N5875

2N5875

Microsemi Corporation

2N5875 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N5875 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Contact Plating Lead, Tin
Mount Through Hole
Packaging Bulk
Published 2007
JESD-609 Code e0
Pbfree Code no
Part Status Active
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Operating Temperature 125°C
Min Operating Temperature -55°C
HTS Code 8541.29.00.95
Max Power Dissipation 150W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code O-MBFM-P2
Qualification Status Not Qualified
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 10A
JEDEC-95 Code TO-3
DC Current Gain-Min (hFE) 20
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $39.28050 $3928.05
2N5875 Product Details

2N5875 Overview


The maximum collector current is 10A volts.

2N5875 Features



2N5875 Applications


There are a lot of Microsemi Corporation 2N5875 applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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