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2N5875

2N5875

2N5875

Microsemi Corporation

2N5875 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N5875 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Contact PlatingLead, Tin
Mount Through Hole
PackagingBulk
Published 2007
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Operating Temperature125°C
Min Operating Temperature -55°C
HTS Code8541.29.00.95
Max Power Dissipation150W
Terminal Position BOTTOM
Terminal FormPIN/PEG
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code O-MBFM-P2
Qualification StatusNot Qualified
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 10A
JEDEC-95 Code TO-3
DC Current Gain-Min (hFE) 20
RoHS StatusNon-RoHS Compliant
In-Stock:235 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$39.28050$3928.05

2N5875 Product Details

2N5875 Overview


The maximum collector current is 10A volts.

2N5875 Features



2N5875 Applications


There are a lot of Microsemi Corporation 2N5875 applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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