2N6296 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
2N6296 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Through Hole
Package / Case
TO-66
JESD-609 Code
e0
Part Status
Active
Terminal Finish
Tin/Lead (Sn/Pb)
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Subcategory
Other Transistors
Reach Compliance Code
not_compliant
Pin Count
2
Number of Elements
1
Polarity
PNP
Configuration
Single
Collector Emitter Voltage (VCEO)
60V
Transition Frequency
4MHz
Collector Emitter Saturation Voltage
2V
Collector Base Voltage (VCBO)
60V
Power Dissipation-Max (Abs)
50W
Emitter Base Voltage (VEBO)
5V
Collector Current-Max (IC)
4A
DC Current Gain-Min (hFE)
750
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$26.74310
$2674.31
2N6296 Product Details
2N6296 Overview
Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.4MHz is present in the transition frequency.
2N6296 Features
a collector emitter saturation voltage of 2V the emitter base voltage is kept at 5V a transition frequency of 4MHz
2N6296 Applications
There are a lot of Microsemi Corporation 2N6296 applications of single BJT transistors.