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2N6296

2N6296

2N6296

Microsemi Corporation

2N6296 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N6296 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-66
JESD-609 Code e0
Part Status Active
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Subcategory Other Transistors
Reach Compliance Code not_compliant
Pin Count 2
Number of Elements 1
Polarity PNP
Configuration Single
Collector Emitter Voltage (VCEO) 60V
Transition Frequency 4MHz
Collector Emitter Saturation Voltage 2V
Collector Base Voltage (VCBO) 60V
Power Dissipation-Max (Abs) 50W
Emitter Base Voltage (VEBO) 5V
Collector Current-Max (IC) 4A
DC Current Gain-Min (hFE) 750
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $26.74310 $2674.31
2N6296 Product Details

2N6296 Overview


Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.4MHz is present in the transition frequency.

2N6296 Features


a collector emitter saturation voltage of 2V
the emitter base voltage is kept at 5V
a transition frequency of 4MHz

2N6296 Applications


There are a lot of Microsemi Corporation 2N6296 applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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