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PBSS5540Z,115

  • PBSS5540Z,115
  • PBSS5540Z,115

PBSS5540Z,115

PBSS5540Z,115

Nexperia USA Inc.

PBSS5540Z,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS5540Z,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2001
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.21.00.75
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number PBSS5540
Pin Count 4
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 2W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 2A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 160mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 5A
Transition Frequency 120MHz
Frequency - Transition 120MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $0.26325 $0.26325
2,000 $0.24300 $0.486
5,000 $0.22950 $1.1475
10,000 $0.22275 $2.2275
PBSS5540Z,115 Product Details

PBSS5540Z,115 Overview


This device has a DC current gain of 150 @ 2A 2V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 160mV @ 200mA, 2A.In the part, the transition frequency is 120MHz.Single BJT transistor shows a 40V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

PBSS5540Z,115 Features


the DC current gain for this device is 150 @ 2A 2V
the vce saturation(Max) is 160mV @ 200mA, 2A
a transition frequency of 120MHz

PBSS5540Z,115 Applications


There are a lot of Nexperia USA Inc. PBSS5540Z,115 applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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