APT50GT120B2RDQ2G

new-10%

Manufacturer part number:APT50GT120B2RDQ2G

Manufacturer:Microsemi Corporation

Description:IGBT 1200V 94A 625W TO247

Case Package:SOT-23

Datasheet:APT50GT120B2RDQ2G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	29 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1999
Series	Thunderbolt IGBT®
JESD-609 Code	e3/e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	PURE MATTE TIN/TIN SILVER COPPER
Max Power Dissipation	625W
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	625W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	94A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	77 ns
Test Condition	800V, 50A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.7V @ 15V, 50A
Turn Off Time-Nom (toff)	303 ns
IGBT Type	NPT
Gate Charge	340nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	24ns/230ns
Switching Energy	2330μJ (off)
Radiation Hardening	No
RoHS Status	RoHS Compliant