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APT50GT120B2RDQ2G

APT50GT120B2RDQ2G

APT50GT120B2RDQ2G

Microsemi Corporation

IGBT 1200V 94A 625W TO247

SOT-23

APT50GT120B2RDQ2G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 29 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Series Thunderbolt IGBT®
JESD-609 Code e3/e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish PURE MATTE TIN/TIN SILVER COPPER
Max Power Dissipation 625W
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 625W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 94A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 77 ns
Test Condition 800V, 50A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 50A
Turn Off Time-Nom (toff) 303 ns
IGBT Type NPT
Gate Charge 340nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 24ns/230ns
Switching Energy 2330μJ (off)
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
32 $15.91031 $509.12992

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