IXXH30N60B3

new-10%

Manufacturer part number:IXXH30N60B3

Manufacturer:IXYS

Description:IGBT 600V TO247

Case Package:SOT-23

Datasheet:IXXH30N60B3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
Series	GenX3™, XPT™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	270W
Input Type	Standard
Power - Max	270W
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.85V
Max Collector Current	60A
Collector Emitter Breakdown Voltage	600V
Test Condition	400V, 24A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.85V @ 15V, 24A
IGBT Type	PT
Gate Charge	39nC
Current - Collector Pulsed (Icm)	115A
Td (on/off) @ 25°C	23ns/97ns
Switching Energy	550μJ (on), 500μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
RoHS Status	ROHS3 Compliant