STGYA120M65DF2 Description
The STGYA120M65DF2 is an IGBT that was created with a patented trench gate field-stop structure. The STGYA120M65DF2 is part of the M family of IGBTs, which provide the best blend of performance and efficiency in inverter systems where low-loss and short-circuit functionality are critical. In addition, the positive VCE(sat) temperature coefficient and narrow parameter distribution make paralleling safer.
STGYA120M65DF2 Features
6 seconds of short-circuit withstand
@ IC = 120 A, VCE(sat) = 1.65 V (typ.)
a narrow parameter distribution
Paralleling is now safer.
VCE(sat) temperature coefficient is positive.
Thermal resistance is low.
Antiparallel diode with a soft and quick recovery time
TJ = 175 °C maximum junction temperature
STGYA120M65DF2 Applications
Motor control
UPS
PFC
General purpose inverter
5406352 NCP1117ST33T3G
