SISA24DN-T1-GE3 Overview

The maximum input capacitance of this device is 2650pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 38.3A.When VGS=25V, and ID flows to VDS at 25VVDS, the drain-source breakdown voltage is 25V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 18 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 12 ns seconds.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

SISA24DN-T1-GE3 Features

a continuous drain current (ID) of 38.3A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 18 ns

SISA24DN-T1-GE3 Applications

There are a lot of Vishay Siliconix
SISA24DN-T1-GE3 applications of single MOSFETs transistors.

• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,