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BUK9675-100A,118

BUK9675-100A,118

BUK9675-100A,118

Nexperia USA Inc.

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 72m Ω @ 10A, 10V ±15V 1704pF @ 25V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SOT-23

BUK9675-100A,118 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, TrenchMOS™
Published 2010
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
HTS Code 8541.29.00.75
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 99W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 98W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 72m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1704pF @ 25V
Current - Continuous Drain (Id) @ 25°C 23A Tc
Rise Time 120ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±15V
Fall Time (Typ) 57 ns
Turn-Off Delay Time 58 ns
Continuous Drain Current (ID) 23A
Gate to Source Voltage (Vgs) 15V
Max Dual Supply Voltage 100V
Drain-source On Resistance-Max 0.084Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 91A
Avalanche Energy Rating (Eas) 100 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.351218 $1.351218
10 $1.274734 $12.74734
100 $1.202579 $120.2579
500 $1.134509 $567.2545
1000 $1.070291 $1070.291
BUK9675-100A,118 Product Details

BUK9675-100A,118 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.The maximum input capacitance of this device is 1704pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 23A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 58 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 91A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 13 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 100V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (5V 10V), this device helps reduce its power consumption.

BUK9675-100A,118 Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 91A.


BUK9675-100A,118 Applications


There are a lot of Nexperia USA Inc.
BUK9675-100A,118 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

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