RFD16N05SM9A

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Manufacturer part number:RFD16N05SM9A

Manufacturer:ON Semiconductor

Description:RFD16N05SM9A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:RFD16N05SM9A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	260.37mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2003
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	47mOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	50V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Current Rating	16A
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	72W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	72W
Case Connection	DRAIN
Turn On Delay Time	14 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	47m Ω @ 16A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	16A Tc
Gate Charge (Qg) (Max) @ Vgs	80nC @ 20V
Rise Time	30ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	16mA
Threshold Voltage	4V
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	50V
Nominal Vgs	4 V
Height	2.39mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free