APT94N65B2C3G

new-10%

Manufacturer part number:APT94N65B2C3G

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 650V 94A TO-247

Case Package:SOT-23

Datasheet:APT94N65B2C3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	22 Weeks
Lifecycle Status	OBSOLETE (Last Updated: 1 month ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1997
Series	CoolMOS™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	833W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	415W
Case Connection	DRAIN
Turn On Delay Time	32 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	35m Ω @ 47A, 10V
Vgs(th) (Max) @ Id	3.9V @ 5.8mA
Input Capacitance (Ciss) (Max) @ Vds	13940pF @ 25V
Current - Continuous Drain (Id) @ 25°C	94A Tc
Gate Charge (Qg) (Max) @ Vgs	580nC @ 10V
Rise Time	59ns
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	167 ns
Turn-Off Delay Time	498 ns
Continuous Drain Current (ID)	94A
Gate to Source Voltage (Vgs)	20V
Pulsed Drain Current-Max (IDM)	282A
DS Breakdown Voltage-Min	650V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free