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APTM100SK18TG

APTM100SK18TG

APTM100SK18TG

Microsemi Corporation

Trans MOSFET N-CH 1KV 43A 20-Pin Case SP-4

SOT-23

APTM100SK18TG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP4
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2012
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 12
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE AND THERMISTOR
Power Dissipation-Max 780W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 780W
Case Connection ISOLATED
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 210m Ω @ 21.5A, 10V
Vgs(th) (Max) @ Id 5V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds 10400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 43A Tc
Gate Charge (Qg) (Max) @ Vgs 372nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 155 ns
Continuous Drain Current (ID) 43A
Gate to Source Voltage (Vgs) 30V
Avalanche Energy Rating (Eas) 3000 mJ
Radiation Hardening No
RoHS Status RoHS Compliant

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