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JAN2N2880

JAN2N2880

JAN2N2880

Microsemi Corporation

JAN2N2880 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N2880 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Stud
Mounting Type Stud Mount
Package / Case TO-210AA, TO-59-4, Stud
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/315
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 2W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 3
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 2W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 1A 2V
Current - Collector Cutoff (Max) 20μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 500mA, 5A
Transition Frequency 30MHz
Collector Base Voltage (VCBO) 110V
Emitter Base Voltage (VEBO) 8V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $164.99000 $16499
JAN2N2880 Product Details

JAN2N2880 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 1A 2V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 500mA, 5A.An emitter's base voltage can be kept at 8V to gain high efficiency.As you can see, the part has a transition frequency of 30MHz.During maximum operation, collector current can be as low as 5A volts.

JAN2N2880 Features


the DC current gain for this device is 40 @ 1A 2V
the vce saturation(Max) is 1.5V @ 500mA, 5A
the emitter base voltage is kept at 8V
a transition frequency of 30MHz

JAN2N2880 Applications


There are a lot of Microsemi Corporation JAN2N2880 applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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