JAN2N5582 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JAN2N5582 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
23 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Contact Plating
Lead, Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-206AB, TO-46-3 Metal Can
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Bulk
Published
2002
Series
Military, MIL-PRF-19500/423
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.21.00.95
Max Power Dissipation
500mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Reference Standard
MIL-19500/423E
JESD-30 Code
O-MBCY-W3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
500mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
1V
Max Collector Current
800mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage
50V
Collector Base Voltage (VCBO)
75V
Turn Off Time-Max (toff)
300ns
Turn On Time-Max (ton)
35ns
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
105
$9.32400
$979.02
JAN2N5582 Product Details
JAN2N5582 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 50mA, 500mA.During maximum operation, collector current can be as low as 800mA volts.
JAN2N5582 Features
the DC current gain for this device is 100 @ 150mA 10V the vce saturation(Max) is 1V @ 50mA, 500mA
JAN2N5582 Applications
There are a lot of Microsemi Corporation JAN2N5582 applications of single BJT transistors.