DXT651-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DXT651-13 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Supplier Device Package
SOT-89-3
Weight
51.993025mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2016
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Base Part Number
DXT651
Polarity
NPN
Element Configuration
Single
Power - Max
1W
Gain Bandwidth Product
200MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
60V
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
3A
Max Breakdown Voltage
60V
Frequency - Transition
200MHz
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
Height
1.5mm
Length
4.5mm
Width
2.5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.656939
$4.656939
10
$4.393338
$43.93338
100
$4.144659
$414.4659
500
$3.910055
$1955.0275
1000
$3.688732
$3688.732
DXT651-13 Product Details
DXT651-13 Overview
This device has a DC current gain of 100 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 300mA, 3A.The emitter base voltage can be kept at 5V for high efficiency.Input voltage breakdown is available at 60V volts.There is no device package available from the supplier for this product.This device displays a 60V maximum voltage - Collector Emitter Breakdown.A maximum collector current of 3A volts can be achieved.
DXT651-13 Features
the DC current gain for this device is 100 @ 500mA 2V the vce saturation(Max) is 600mV @ 300mA, 3A the emitter base voltage is kept at 5V the supplier device package of SOT-89-3
DXT651-13 Applications
There are a lot of Diodes Incorporated DXT651-13 applications of single BJT transistors.