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DXT651-13

DXT651-13

DXT651-13

Diodes Incorporated

DXT651-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DXT651-13 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Supplier Device Package SOT-89-3
Weight 51.993025mg
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2016
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature150°C
Min Operating Temperature -55°C
Max Power Dissipation1W
Base Part Number DXT651
Polarity NPN
Element ConfigurationSingle
Power - Max 1W
Gain Bandwidth Product200MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 300mA, 3A
Collector Emitter Breakdown Voltage60V
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 3A
Max Breakdown Voltage 60V
Frequency - Transition 200MHz
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
Height 1.5mm
Length 4.5mm
Width 2.5mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
In-Stock:15182 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.656939$4.656939
10$4.393338$43.93338
100$4.144659$414.4659
500$3.910055$1955.0275
1000$3.688732$3688.732

DXT651-13 Product Details

DXT651-13 Overview


This device has a DC current gain of 100 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 300mA, 3A.The emitter base voltage can be kept at 5V for high efficiency.Input voltage breakdown is available at 60V volts.There is no device package available from the supplier for this product.This device displays a 60V maximum voltage - Collector Emitter Breakdown.A maximum collector current of 3A volts can be achieved.

DXT651-13 Features


the DC current gain for this device is 100 @ 500mA 2V
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the supplier device package of SOT-89-3

DXT651-13 Applications


There are a lot of Diodes Incorporated DXT651-13 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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