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BD438S

BD438S

BD438S

ON Semiconductor

BD438S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD438S Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Weight 761mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -45V
Max Power Dissipation 36W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -4A
Frequency 3MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BD438
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 36W
Transistor Application SWITCHING
Gain Bandwidth Product 3MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 600mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 45V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage -200mV
Collector Base Voltage (VCBO) -45V
Emitter Base Voltage (VEBO) -5V
hFE Min 40
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,000 $0.24767 $0.49534
BD438S Product Details

BD438S Overview


This device has a DC current gain of 30 @ 10mA 5V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is -200mV, giving you a wide variety of design options.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at -5V for high efficiency.Its current rating is -4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In this part, there is a transition frequency of 3MHz.Maximum collector currents can be below 4A volts.

BD438S Features


the DC current gain for this device is 30 @ 10mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 600mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 3MHz

BD438S Applications


There are a lot of ON Semiconductor BD438S applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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