BD438S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD438S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Weight
761mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2001
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-45V
Max Power Dissipation
36W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
-4A
Frequency
3MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BD438
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
36W
Transistor Application
SWITCHING
Gain Bandwidth Product
3MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 10mA 5V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
600mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
45V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
-200mV
Collector Base Voltage (VCBO)
-45V
Emitter Base Voltage (VEBO)
-5V
hFE Min
40
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,000
$0.24767
$0.49534
BD438S Product Details
BD438S Overview
This device has a DC current gain of 30 @ 10mA 5V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is -200mV, giving you a wide variety of design options.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at -5V for high efficiency.Its current rating is -4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In this part, there is a transition frequency of 3MHz.Maximum collector currents can be below 4A volts.
BD438S Features
the DC current gain for this device is 30 @ 10mA 5V a collector emitter saturation voltage of -200mV the vce saturation(Max) is 600mV @ 200mA, 2A the emitter base voltage is kept at -5V the current rating of this device is -4A a transition frequency of 3MHz
BD438S Applications
There are a lot of ON Semiconductor BD438S applications of single BJT transistors.