JANS2N3500 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JANS2N3500 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/366
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
HTS Code
8541.29.00.95
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
2
Number of Elements
1
Configuration
SINGLE
Power - Max
1W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
150V
Max Collector Current
300mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA 10V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 15mA, 150mA
Collector Base Voltage (VCBO)
150V
Turn Off Time-Max (toff)
1150ns
Turn On Time-Max (ton)
115ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$56.04000
$56.04
500
$55.4796
$27739.8
1000
$54.9192
$54919.2
1500
$54.3588
$81538.2
2000
$53.7984
$107596.8
2500
$53.238
$133095
JANS2N3500 Product Details
JANS2N3500 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 150mA 10V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 15mA, 150mA.A maximum collector current of 300mA volts is possible.
JANS2N3500 Features
the DC current gain for this device is 40 @ 150mA 10V the vce saturation(Max) is 400mV @ 15mA, 150mA
JANS2N3500 Applications
There are a lot of Microsemi Corporation JANS2N3500 applications of single BJT transistors.