50C02SS-TL-E Overview

In this device, the DC current gain is 300 @ 10mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 100mV allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 100mV @ 10mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Maximum collector currents can be below 400mA volts.

50C02SS-TL-E Features

the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 100mV @ 10mA, 100mA
the emitter base voltage is kept at 5V

50C02SS-TL-E Applications

There are a lot of ON Semiconductor 50C02SS-TL-E applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface