MJB45H11G Overview
In this device, the DC current gain is 40 @ 4A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 400mA, 8A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -10A.Parts of this part have transition frequencies of 40MHz.A maximum collector current of 10A volts can be achieved.
MJB45H11G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 40MHz
MJB45H11G Applications
There are a lot of ON Semiconductor MJB45H11G applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
