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NJW21194G

NJW21194G

NJW21194G

ON Semiconductor

NJW21194G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NJW21194G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 29 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Surface MountNO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation200mW
Frequency 4MHz
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation200mW
Power - Max 200W
Transistor Application AMPLIFIER
Gain Bandwidth Product4MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 250V
Max Collector Current 16A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 8A 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 4V @ 3.2A, 16A
Collector Emitter Breakdown Voltage350V
Transition Frequency 4MHz
Collector Emitter Saturation Voltage4V
Max Breakdown Voltage 250V
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) 5V
hFE Min 20
Height 20.1mm
Length 15.8mm
Width 5mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1465 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.16000$4.16
30$3.53200$105.96
120$3.06100$367.32
510$2.60578$1328.9478

NJW21194G Product Details

NJW21194G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 8A 5V.The collector emitter saturation voltage is 4V, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 4V @ 3.2A, 16A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In the part, the transition frequency is 4MHz.This device can take an input voltage of 250V volts before it breaks down.The maximum collector current is 16A volts.

NJW21194G Features


the DC current gain for this device is 20 @ 8A 5V
a collector emitter saturation voltage of 4V
the vce saturation(Max) is 4V @ 3.2A, 16A
the emitter base voltage is kept at 5V
a transition frequency of 4MHz

NJW21194G Applications


There are a lot of ON Semiconductor NJW21194G applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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