NJW21194G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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NJW21194G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
29 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
200mW
Frequency
4MHz
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
200mW
Power - Max
200W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
4MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
250V
Max Collector Current
16A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 8A 5V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
4V @ 3.2A, 16A
Collector Emitter Breakdown Voltage
350V
Transition Frequency
4MHz
Collector Emitter Saturation Voltage
4V
Max Breakdown Voltage
250V
Collector Base Voltage (VCBO)
400V
Emitter Base Voltage (VEBO)
5V
hFE Min
20
Height
20.1mm
Length
15.8mm
Width
5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.16000
$4.16
30
$3.53200
$105.96
120
$3.06100
$367.32
510
$2.60578
$1328.9478
NJW21194G Product Details
NJW21194G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 8A 5V.The collector emitter saturation voltage is 4V, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 4V @ 3.2A, 16A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In the part, the transition frequency is 4MHz.This device can take an input voltage of 250V volts before it breaks down.The maximum collector current is 16A volts.
NJW21194G Features
the DC current gain for this device is 20 @ 8A 5V a collector emitter saturation voltage of 4V the vce saturation(Max) is 4V @ 3.2A, 16A the emitter base voltage is kept at 5V a transition frequency of 4MHz
NJW21194G Applications
There are a lot of ON Semiconductor NJW21194G applications of single BJT transistors.