DSS2515M-7B Overview

In this device, the DC current gain is 150 @ 100mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 50mA, 500mA.For high efficiency, the continuous collector voltage must be kept at 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.The part has a transition frequency of 250MHz.Input voltage breakdown is available at 15V volts.When collector current reaches its maximum, it can reach 500mA volts.

DSS2515M-7B Features

the DC current gain for this device is 150 @ 100mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz

DSS2515M-7B Applications

There are a lot of Diodes Incorporated DSS2515M-7B applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver