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PHPT61002NYCLHX

  • PHPT61002NYCLHX
  • PHPT61002NYCLHX

PHPT61002NYCLHX

PHPT61002NYCLHX

Nexperia USA Inc.

PHPT61002NYCLHX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PHPT61002NYCLHX Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Published 2017
Part Status Active
Pin Count 4
Power - Max 25W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 10V
Current - Collector Cutoff (Max) 50μA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 2A
Frequency - Transition 140MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.385619 $0.385619
10 $0.363791 $3.63791
100 $0.343200 $34.32
500 $0.323773 $161.8865
1000 $0.305447 $305.447
PHPT61002NYCLHX Product Details

PHPT61002NYCLHX Overview


DC current gain in this device equals 120 @ 500mA 10V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 300mV @ 200mA, 2A means Ic has reached its maximum value(saturated).The device exhibits a collector-emitter breakdown at 100V.

PHPT61002NYCLHX Features


the DC current gain for this device is 120 @ 500mA 10V
the vce saturation(Max) is 300mV @ 200mA, 2A

PHPT61002NYCLHX Applications


There are a lot of Nexperia USA Inc. PHPT61002NYCLHX applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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