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JANTX2N3636L

JANTX2N3636L

JANTX2N3636L

Microsemi Corporation

JANTX2N3636L datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N3636L Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 23 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AA, TO-5-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/357
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.29.00.95
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 3
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 1W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 175V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 50mA 10V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 50mA
Collector Base Voltage (VCBO) 175V
Turn Off Time-Max (toff) 650ns
Turn On Time-Max (ton) 200ns
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $12.98000 $12.98
500 $12.8502 $6425.1
1000 $12.7204 $12720.4
1500 $12.5906 $18885.9
2000 $12.4608 $24921.6
2500 $12.331 $30827.5
JANTX2N3636L Product Details

JANTX2N3636L Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 50mA 10V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 50mA.Collector current can be as low as 1A volts at its maximum.

JANTX2N3636L Features


the DC current gain for this device is 50 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA

JANTX2N3636L Applications


There are a lot of Microsemi Corporation JANTX2N3636L applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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