JANTX2N3868S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTX2N3868S Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/350
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
2
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 1.5A 2V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 250mA, 2.5A
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
4V
Turn Off Time-Max (toff)
600ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$36.54000
$3654
JANTX2N3868S Product Details
JANTX2N3868S Overview
In this device, the DC current gain is 30 @ 1.5A 2V, which is the ratio between the base current and the collector current.When VCE saturation is 1.5V @ 250mA, 2.5A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 4V can result in a high level of efficiency.Maximum collector currents can be below 3A volts.
JANTX2N3868S Features
the DC current gain for this device is 30 @ 1.5A 2V the vce saturation(Max) is 1.5V @ 250mA, 2.5A the emitter base voltage is kept at 4V
JANTX2N3868S Applications
There are a lot of Microsemi Corporation JANTX2N3868S applications of single BJT transistors.