JANTX2N3772 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTX2N3772 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/518
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.29.00.95
Max Power Dissipation
6W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Pin Count
2
JESD-30 Code
O-MBFM-P2
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
20A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 10A 4V
Current - Collector Cutoff (Max)
5mA
Vce Saturation (Max) @ Ib, Ic
4V @ 4A, 20A
Current - Collector (Ic) (Max)
20A
Collector Base Voltage (VCBO)
100V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$467.78000
$467.78
JANTX2N3772 Product Details
JANTX2N3772 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 10A 4V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 4V @ 4A, 20A.When collector current reaches its maximum, it can reach 20A volts.
JANTX2N3772 Features
the DC current gain for this device is 15 @ 10A 4V the vce saturation(Max) is 4V @ 4A, 20A
JANTX2N3772 Applications
There are a lot of Microsemi Corporation JANTX2N3772 applications of single BJT transistors.