MJD210G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MJD210G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-25V
Max Power Dissipation
1.4W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-5A
Frequency
65MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MJD210
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.4W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Gain Bandwidth Product
65MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
25V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
45 @ 2A 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.8V @ 1A, 5A
Collector Emitter Breakdown Voltage
25V
Transition Frequency
65MHz
Collector Emitter Saturation Voltage
1.8V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
8V
hFE Min
70
Height
2.3876mm
Length
6.7056mm
Width
6.223mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.672120
$0.67212
10
$0.634075
$6.34075
100
$0.598184
$59.8184
500
$0.564325
$282.1625
1000
$0.532382
$532.382
MJD210G Product Details
MJD210G Overview
In this device, the DC current gain is 45 @ 2A 1V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 1.8V allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A high level of efficiency can be achieved if the base voltage of the emitter remains at 8V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -5A.A transition frequency of 65MHz is present in the part.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.
MJD210G Features
the DC current gain for this device is 45 @ 2A 1V a collector emitter saturation voltage of 1.8V the vce saturation(Max) is 1.8V @ 1A, 5A the emitter base voltage is kept at 8V the current rating of this device is -5A a transition frequency of 65MHz
MJD210G Applications
There are a lot of ON Semiconductor MJD210G applications of single BJT transistors.