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JANTX2N3879

JANTX2N3879

JANTX2N3879

Microsemi Corporation

JANTX2N3879 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N3879 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 4 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-213AA, TO-66-2
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2002
Series Military, MIL-PRF-19500/526
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Max Power Dissipation 35W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Pin Count 3
JESD-30 Code O-MBFM-P2
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 35W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 75V
Max Collector Current 7A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 5V
Current - Collector Cutoff (Max) 25mA ICBO
Vce Saturation (Max) @ Ib, Ic 1.2V @ 400mA, 4A
Transition Frequency 40MHz
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 7V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $31.066000 $31.066
10 $29.307547 $293.07547
100 $27.648629 $2764.8629
500 $26.083613 $13041.8065
1000 $24.607182 $24607.182
JANTX2N3879 Product Details

JANTX2N3879 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 4A 5V DC current gain.When VCE saturation is 1.2V @ 400mA, 4A, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at 7V to gain high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 40MHz.Maximum collector currents can be below 7A volts.

JANTX2N3879 Features


the DC current gain for this device is 20 @ 4A 5V
the vce saturation(Max) is 1.2V @ 400mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 40MHz

JANTX2N3879 Applications


There are a lot of Microsemi Corporation JANTX2N3879 applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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