JANTX2N3879 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTX2N3879 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 4 weeks ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-213AA, TO-66-2
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2002
Series
Military, MIL-PRF-19500/526
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Max Power Dissipation
35W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Pin Count
3
JESD-30 Code
O-MBFM-P2
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
35W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
75V
Max Collector Current
7A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 4A 5V
Current - Collector Cutoff (Max)
25mA ICBO
Vce Saturation (Max) @ Ib, Ic
1.2V @ 400mA, 4A
Transition Frequency
40MHz
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
7V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$31.066000
$31.066
10
$29.307547
$293.07547
100
$27.648629
$2764.8629
500
$26.083613
$13041.8065
1000
$24.607182
$24607.182
JANTX2N3879 Product Details
JANTX2N3879 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 4A 5V DC current gain.When VCE saturation is 1.2V @ 400mA, 4A, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at 7V to gain high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 40MHz.Maximum collector currents can be below 7A volts.
JANTX2N3879 Features
the DC current gain for this device is 20 @ 4A 5V the vce saturation(Max) is 1.2V @ 400mA, 4A the emitter base voltage is kept at 7V a transition frequency of 40MHz
JANTX2N3879 Applications
There are a lot of Microsemi Corporation JANTX2N3879 applications of single BJT transistors.