CPH3109-TL-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 500mA 2V DC current gain.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -155mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 230mV @ 30mA, 1.5A.The emitter base voltage can be kept at 5V for high efficiency.In extreme cases, the collector current can be as low as 3A volts.
CPH3109-TL-E Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of -155mV
the vce saturation(Max) is 230mV @ 30mA, 1.5A
the emitter base voltage is kept at 5V
CPH3109-TL-E Applications
There are a lot of ON Semiconductor CPH3109-TL-E applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
