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CPH6122-TL-E

CPH6122-TL-E

CPH6122-TL-E

ON Semiconductor

CPH6122-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

CPH6122-TL-E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Max Power Dissipation 1.3W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Frequency 400MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 6
Number of Elements 1
Element Configuration Single
Power Dissipation 1.3W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 180mV @ 75mA, 1.5A
Collector Emitter Breakdown Voltage 30V
Current - Collector (Ic) (Max) 3A
Transition Frequency 400MHz
Collector Emitter Saturation Voltage -270mV
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 5V
hFE Min 200
Height 900μm
Length 2.9mm
Width 1.6mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.078533 $2.078533
10 $1.960880 $19.6088
100 $1.849887 $184.9887
500 $1.745176 $872.588
1000 $1.646393 $1646.393
CPH6122-TL-E Product Details

CPH6122-TL-E Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 500mA 2V.The collector emitter saturation voltage is -270mV, giving you a wide variety of design options.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 180mV @ 75mA, 1.5A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.400MHz is present in the transition frequency.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

CPH6122-TL-E Features


the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of -270mV
the vce saturation(Max) is 180mV @ 75mA, 1.5A
the emitter base voltage is kept at 5V
a transition frequency of 400MHz

CPH6122-TL-E Applications


There are a lot of ON Semiconductor CPH6122-TL-E applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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