CPH6122-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
CPH6122-TL-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
5 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Surface Mount
YES
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Max Power Dissipation
1.3W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Frequency
400MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
6
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.3W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
180mV @ 75mA, 1.5A
Collector Emitter Breakdown Voltage
30V
Current - Collector (Ic) (Max)
3A
Transition Frequency
400MHz
Collector Emitter Saturation Voltage
-270mV
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
5V
hFE Min
200
Height
900μm
Length
2.9mm
Width
1.6mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.078533
$2.078533
10
$1.960880
$19.6088
100
$1.849887
$184.9887
500
$1.745176
$872.588
1000
$1.646393
$1646.393
CPH6122-TL-E Product Details
CPH6122-TL-E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 500mA 2V.The collector emitter saturation voltage is -270mV, giving you a wide variety of design options.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 180mV @ 75mA, 1.5A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.400MHz is present in the transition frequency.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
CPH6122-TL-E Features
the DC current gain for this device is 200 @ 500mA 2V a collector emitter saturation voltage of -270mV the vce saturation(Max) is 180mV @ 75mA, 1.5A the emitter base voltage is kept at 5V a transition frequency of 400MHz
CPH6122-TL-E Applications
There are a lot of ON Semiconductor CPH6122-TL-E applications of single BJT transistors.