NSS12601CF8T1G Overview

In this device, the DC current gain is 200 @ 1A 2V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 120mV @ 400mA, 4A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Single BJT transistor contains a transSingle BJT transistorion frequency of 140MHz.An input voltage of 12V volts is the breakdown voltage.In extreme cases, the collector current can be as low as 6A volts.

NSS12601CF8T1G Features

the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 120mV @ 400mA, 4A
the emitter base voltage is kept at 6V
a transition frequency of 140MHz

NSS12601CF8T1G Applications

There are a lot of ON Semiconductor NSS12601CF8T1G applications of single BJT transistors.

• Interface
• Muting
• Inverter
• Driver