JANTX2N930 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTX2N930 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
23 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 4 weeks ago)
Contact Plating
Lead, Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-206AA, TO-18-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Bulk
Published
2002
Series
Military, MIL-PRF-19500/253
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Max Power Dissipation
300mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
300mW
Case Connection
COLLECTOR
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
30mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10μA 5V
Current - Collector Cutoff (Max)
2nA
Vce Saturation (Max) @ Ib, Ic
1V @ 500μA, 10mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
30MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$14.76000
$14.76
10
$13.41900
$134.19
25
$12.41240
$310.31
JANTX2N930 Product Details
JANTX2N930 Overview
This device has a DC current gain of 100 @ 10μA 5V, which is the ratio between the collector current and the base current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 500μA, 10mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.In this part, there is a transition frequency of 30MHz.Collector current can be as low as 30mA volts at its maximum.
JANTX2N930 Features
the DC current gain for this device is 100 @ 10μA 5V the vce saturation(Max) is 1V @ 500μA, 10mA the emitter base voltage is kept at 6V a transition frequency of 30MHz
JANTX2N930 Applications
There are a lot of Microsemi Corporation JANTX2N930 applications of single BJT transistors.