Welcome to Hotenda.com Online Store!

logo
userjoin
Home

JANTX2N930

JANTX2N930

JANTX2N930

Microsemi Corporation

JANTX2N930 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N930 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 23 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 4 weeks ago)
Contact Plating Lead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~200°C TJ
Packaging Bulk
Published 2002
Series Military, MIL-PRF-19500/253
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Max Power Dissipation 300mW
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 300mW
Case Connection COLLECTOR
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 30mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10μA 5V
Current - Collector Cutoff (Max) 2nA
Vce Saturation (Max) @ Ib, Ic 1V @ 500μA, 10mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 30MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $14.76000 $14.76
10 $13.41900 $134.19
25 $12.41240 $310.31
JANTX2N930 Product Details

JANTX2N930 Overview


This device has a DC current gain of 100 @ 10μA 5V, which is the ratio between the collector current and the base current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 500μA, 10mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.In this part, there is a transition frequency of 30MHz.Collector current can be as low as 30mA volts at its maximum.

JANTX2N930 Features


the DC current gain for this device is 100 @ 10μA 5V
the vce saturation(Max) is 1V @ 500μA, 10mA
the emitter base voltage is kept at 6V
a transition frequency of 30MHz

JANTX2N930 Applications


There are a lot of Microsemi Corporation JANTX2N930 applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News