FJA4310OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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FJA4310OTU Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Weight
6.401g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
140V
Max Power Dissipation
100W
Current Rating
10A
Frequency
30MHz
Number of Elements
1
Element Configuration
Single
Power Dissipation
100W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
30MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
140V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 3A 4V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 500mA, 5A
Collector Emitter Breakdown Voltage
140V
Transition Frequency
30MHz
Collector Emitter Saturation Voltage
500mV
Collector Base Voltage (VCBO)
200V
Emitter Base Voltage (VEBO)
6V
hFE Min
50
Height
20.1mm
Length
15.8mm
Width
5mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.97000
$1.97
10
$1.77600
$17.76
450
$1.35342
$609.039
900
$1.19120
$1072.08
1,350
$0.99653
$0.99653
FJA4310OTU Product Details
FJA4310OTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 70 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.When VCE saturation is 500mV @ 500mA, 5A, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at 6V to gain high efficiency.The current rating of this fuse is 10A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 30MHz.Collector current can be as low as 10A volts at its maximum.
FJA4310OTU Features
the DC current gain for this device is 70 @ 3A 4V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 500mA, 5A the emitter base voltage is kept at 6V the current rating of this device is 10A a transition frequency of 30MHz
FJA4310OTU Applications
There are a lot of ON Semiconductor FJA4310OTU applications of single BJT transistors.