2N5551 Overview
This device has a DC current gain of 80 @ 10mA 5V, which is the ratio between the collector current and the base current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 5mA, 50mA.As you can see, the part has a transition frequency of 100MHz.There is a 160V maximal voltage in the device due to collector-emitter breakdown.
2N5551 Features
the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
a transition frequency of 100MHz
2N5551 Applications
There are a lot of Rochester Electronics, LLC 2N5551 applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
