Welcome to Hotenda.com Online Store!

logo
userjoin
Home

MJD117T4

  • MJD117T4
  • MJD117T4

MJD117T4

MJD117T4

STMicroelectronics

MJD117T4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website

SOT-23

MJD117T4 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Other Transistors
Voltage - Rated DC -100V
Max Power Dissipation 20W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -2A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number MJD117
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 20W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 25MHz
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A 3V
Current - Collector Cutoff (Max) 20μA
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A
Collector Emitter Breakdown Voltage -100V
Current - Collector (Ic) (Max) 2A
Collector Emitter Saturation Voltage 3V
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 200
Max Junction Temperature (Tj) 150°C
VCEsat-Max 3 V
Height 2.63mm
Length 6.6mm
Width 6.2mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.26590 $0.5318
5,000 $0.25054 $1.2527
12,500 $0.23518 $2.82216
25,000 $0.23262 $5.8155
MJD117T4 Product Details

MJD117T4 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 2A 3V.The collector emitter saturation voltage is 3V, giving you a wide variety of design options.A VCE saturation (Max) of 3V @ 40mA, 4A means Ic has reached its maximum value(saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Its current rating is -2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.An input voltage of 100V volts is the breakdown voltage.During maximum operation, collector current can be as low as 4A volts.

MJD117T4 Features


the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -2A

MJD117T4 Applications


There are a lot of STMicroelectronics MJD117T4 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

Related Part Number

PBSS301ND,115
Nexperia USA Inc.
PBSS301ND,115
$0 $/piece
2N6227
Microsemi Corporation
2N6227
$0 $/piece
BSP50H6327XTSA1
Infineon Technologies
BSP50H6327XTSA1
$0 $/piece
PBSS4350D,135
Nexperia USA Inc.
PBSS4350D,135
$0 $/piece
BCP53TF
Nexperia USA Inc.
BCP53TF
$0 $/piece
MMBT3904TT1G
ON Semiconductor
MMBT3904TT1G
$0 $/piece
APT13003DZTR-G1
Diodes Incorporated
APT13003DZTR-G1
$0 $/piece
BD437S
ON Semiconductor
BD437S
$0 $/piece
MMBT2222A,215
Nexperia USA Inc.
MMBT2222A,215
$0 $/piece
DT955-7
Diodes Incorporated
DT955-7
$0 $/piece
view all related

Get Subscriber

Enter Your Email Address, Get the Latest News