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TTC5200(Q)

TTC5200(Q)

TTC5200(Q)

Toshiba Semiconductor and Storage

TTC5200(Q) datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

TTC5200(Q) Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3PL
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tray
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 150W
Frequency 30MHz
Number of Elements 1
Element Configuration Single
Power Dissipation 150W
Gain Bandwidth Product 30MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 230V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1A 5V
Current - Collector Cutoff (Max) 5μA ICBO
Vce Saturation (Max) @ Ib, Ic 3V @ 800mA, 8A
Collector Emitter Breakdown Voltage 230V
Collector Emitter Saturation Voltage 3V
Collector Base Voltage (VCBO) 230V
Emitter Base Voltage (VEBO) 5V
hFE Min 80
Height 26mm
Length 20.5mm
Width 5.2mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.89000 $2.89
10 $2.61100 $26.11
25 $2.33120 $58.28
100 $2.09790 $209.79
300 $1.86480 $559.44
500 $1.63170 $815.85
1,000 $1.35198 $1.35198
2,500 $1.25874 $2.51748
5,000 $1.24320 $6.216
TTC5200(Q) Product Details

TTC5200(Q) Overview


In this device, the DC current gain is 80 @ 1A 5V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of 3V, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 800mA, 8A.With the emitter base voltage set at 5V, an efficient operation can be achieved.In extreme cases, the collector current can be as low as 15A volts.

TTC5200(Q) Features


the DC current gain for this device is 80 @ 1A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V

TTC5200(Q) Applications


There are a lot of Toshiba Semiconductor and Storage TTC5200(Q) applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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