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JANTXV2N3501UB

  • JANTXV2N3501UB
  • JANTXV2N3501UB

JANTXV2N3501UB

JANTXV2N3501UB

Microsemi Corporation

JANTXV2N3501UB datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTXV2N3501UB Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 23 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-SMD, No Lead
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Series Military, MIL-PRF-19500/366
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.21.00.95
Max Power Dissipation 500mW
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Reference Standard MIL-19500/366
JESD-30 Code R-CDSO-N3
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 500mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 300mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 15mA, 150mA
Collector Emitter Breakdown Voltage 150V
Turn Off Time-Max (toff) 1150ns
Turn On Time-Max (ton) 115ns
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $25.81400 $2581.4
JANTXV2N3501UB Product Details

JANTXV2N3501UB Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 15mA, 150mA.Collector current can be as low as 300mA volts at its maximum.

JANTXV2N3501UB Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA

JANTXV2N3501UB Applications


There are a lot of Microsemi Corporation JANTXV2N3501UB applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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