2PA1576Q,115 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 1mA 6V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 5mA, 50mA.The emitter base voltage can be kept at 6V for high efficiency.An input voltage of 50V volts is the breakdown voltage.Product comes in SC-70 supplier package.A 50V maximal voltage - Collector Emitter Breakdown is present in the device.During maximum operation, collector current can be as low as 150mA volts.

2PA1576Q,115 Features

the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the supplier device package of SC-70

2PA1576Q,115 Applications

There are a lot of Nexperia USA Inc. 2PA1576Q,115 applications of single BJT transistors.

• Driver
• Interface
• Inverter
• Muting