2PB1219AQ,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
2PB1219AQ,135 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2PB1219
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
200mW
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
85 @ 150mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 30mA, 300mA
Collector Emitter Breakdown Voltage
50V
Transition Frequency
100MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
VCEsat-Max
0.6 V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.039003
$4.039003
10
$3.810380
$38.1038
100
$3.594699
$359.4699
500
$3.391225
$1695.6125
1000
$3.199269
$3199.269
2PB1219AQ,135 Product Details
2PB1219AQ,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 85 @ 150mA 10V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 30mA, 300mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 100MHz.The maximum collector current is 500mA volts.
2PB1219AQ,135 Features
the DC current gain for this device is 85 @ 150mA 10V the vce saturation(Max) is 600mV @ 30mA, 300mA the emitter base voltage is kept at 5V a transition frequency of 100MHz
2PB1219AQ,135 Applications
There are a lot of Nexperia USA Inc. 2PB1219AQ,135 applications of single BJT transistors.