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PBSS5520X,135

  • PBSS5520X,135
  • PBSS5520X,135

PBSS5520X,135

PBSS5520X,135

Nexperia USA Inc.

PBSS5520X,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS5520X,135 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 1.6W
Terminal Form FLAT
Frequency 100MHz
Base Part Number PBSS5520
Pin Count 3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element Configuration Single
Power Dissipation 2.5W
Case Connection COLLECTOR
Power - Max 1.6W
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 2A 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 270mV @ 500mA, 5A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 100MHz
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) -5V
hFE Min 300
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.671915 $3.671915
10 $3.464070 $34.6407
100 $3.267991 $326.7991
500 $3.083011 $1541.5055
1000 $2.908501 $2908.501
PBSS5520X,135 Product Details

PBSS5520X,135 Overview


This device has a DC current gain of 250 @ 2A 2V, which is the ratio between the collector current and the base current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 270mV @ 500mA, 5A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.As a result, the part has a transition frequency of 100MHz.There is a breakdown input voltage of 20V volts that it can take.A maximum collector current of 5A volts is possible.

PBSS5520X,135 Features


the DC current gain for this device is 250 @ 2A 2V
the vce saturation(Max) is 270mV @ 500mA, 5A
the emitter base voltage is kept at -5V
a transition frequency of 100MHz

PBSS5520X,135 Applications


There are a lot of Nexperia USA Inc. PBSS5520X,135 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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