MMBTA64LT1G Overview

This device has a DC current gain of 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.5V @ 100μA, 100mA means Ic has reached its maximum value(saturated).Continuous collector voltage should be kept at -500mA for high efficiency.An emitter's base voltage can be kept at 10V to gain high efficiency.The current rating of this fuse is -500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As you can see, the part has a transition frequency of 125MHz.An input voltage of 30V volts is the breakdown voltage.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

MMBTA64LT1G Features

the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz

MMBTA64LT1G Applications

There are a lot of ON Semiconductor MMBTA64LT1G applications of single BJT transistors.

• Driver
• Inverter
• Interface
• Muting