PBSS4350D,115 Overview

This device has a DC current gain of 100 @ 2A 2V, which is the ratio between the collector current and the base current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 290mV @ 200mA, 2A.With the emitter base voltage set at 6V, an efficient operation can be achieved.As a result, the part has a transition frequency of 100MHz.This device can take an input voltage of 50V volts before it breaks down.Collector current can be as low as 3A volts at its maximum.

PBSS4350D,115 Features

the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 290mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

PBSS4350D,115 Applications

There are a lot of Nexperia USA Inc. PBSS4350D,115 applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver