MJD112RLG Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 2A 3V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 40mA, 4A.In order to achieve high efficiency, the continuous collector voltage should be kept at 2A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 2A.25MHz is present in the transition frequency.Breakdown input voltage is 100V volts.Maximum collector currents can be below 2A volts.

MJD112RLG Features

the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 25MHz

MJD112RLG Applications

There are a lot of ON Semiconductor MJD112RLG applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver