BC807-25HR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BC807-25HR Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
-55°C~175°C TA
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
320mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
500mA
Frequency - Transition
80MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.257000
$0.257
10
$0.242453
$2.42453
100
$0.228729
$22.8729
500
$0.215782
$107.891
1000
$0.203568
$203.568
BC807-25HR Product Details
BC807-25HR Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 100mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 50mA, 500mA.Collector Emitter Breakdown occurs at 45VV - Maximum voltage.
BC807-25HR Features
the DC current gain for this device is 160 @ 100mA 1V the vce saturation(Max) is 700mV @ 50mA, 500mA
BC807-25HR Applications
There are a lot of Nexperia USA Inc. BC807-25HR applications of single BJT transistors.