MJD127T4G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 4A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.A VCE saturation (Max) of 4V @ 80mA, 8A means Ic has reached its maximum value(saturated).A constant collector voltage of 8A is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -8A current rating.There is a transition frequency of 4MHz in the part.Single BJT transistor can be broken down at a voltage of 100V volts.A maximum collector current of 8A volts can be achieved.
MJD127T4G Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 4MHz
MJD127T4G Applications
There are a lot of ON Semiconductor MJD127T4G applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
