BC807-25QAZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BC807-25QAZ Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-XDFN Exposed Pad
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
900mW
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BC807
Pin Count
3
Power - Max
900mW
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
700mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 500mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Max Breakdown Voltage
45V
Frequency - Transition
80MHz
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.415890
$0.41589
10
$0.392349
$3.92349
100
$0.370140
$37.014
500
$0.349189
$174.5945
1000
$0.329423
$329.423
BC807-25QAZ Product Details
BC807-25QAZ Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 500mA 1V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).An emitter's base voltage can be kept at 5V to gain high efficiency.The breakdown input voltage is 45V volts.A maximum collector current of 500mA volts can be achieved.
BC807-25QAZ Features
the DC current gain for this device is 40 @ 500mA 1V the vce saturation(Max) is 700mV @ 50mA, 500mA the emitter base voltage is kept at 5V
BC807-25QAZ Applications
There are a lot of Nexperia USA Inc. BC807-25QAZ applications of single BJT transistors.