MSB1218A-RT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 210 @ 2mA 10V.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 10mA, 100mA.The emitter base voltage can be kept at 7V for high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.The part has a transition frequency of 100MHz.A maximum collector current of 100mA volts is possible.
MSB1218A-RT1G Features
the DC current gain for this device is 210 @ 2mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 7V
the current rating of this device is -100mA
a transition frequency of 100MHz
MSB1218A-RT1G Applications
There are a lot of ON Semiconductor MSB1218A-RT1G applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
