BC857AM,315 Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 125 @ 2mA 5V.This design offers maximum flexibility with a collector emitter saturation voltage of -400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 100mA.An emitter's base voltage can be kept at -5V to gain high efficiency.In the part, the transition frequency is 100MHz.In extreme cases, the collector current can be as low as -100mA volts.

BC857AM,315 Features

the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz

BC857AM,315 Applications

There are a lot of Nexperia USA Inc. BC857AM,315 applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter