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BC857W,135

  • BC857W,135
  • BC857W,135

BC857W,135

BC857W,135

Nexperia USA Inc.

BC857W,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BC857W,135 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BC857
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
Collector-Base Capacitance-Max 5pF
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.034680 $0.03468
500 $0.025500 $12.75
1000 $0.021250 $21.25
2000 $0.019495 $38.99
5000 $0.018220 $91.1
10000 $0.016949 $169.49
15000 $0.016392 $245.88
50000 $0.016118 $805.9
BC857W,135 Product Details

BC857W,135 Overview


This device has a DC current gain of 125 @ 2mA 5V, which is the ratio between the collector current and the base current.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).The base voltage of the emitter can be kept at 5V to achieve high efficiency.As you can see, the part has a transition frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

BC857W,135 Features


the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC857W,135 Applications


There are a lot of Nexperia USA Inc. BC857W,135 applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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