MMBT2907AWT1G Overview
DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -1.6V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.6V @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.This device has a current rating of -600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Parts of this part have transition frequencies of 200MHz.This device can take an input voltage of 60V volts before it breaks down.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
MMBT2907AWT1G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz
MMBT2907AWT1G Applications
There are a lot of ON Semiconductor MMBT2907AWT1G applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
